研究業績

論文

2020年

[1] Daisuke Tomida, Tohru Yoshinaga: "Thermal Conductivity Measurements of Liquid Ammonia by the Transient Short‑Hot‑Wire Method", International Journal of Thermophysics, 41, 53 DOI: 10.1007/s10765-020-02633-8, (2020/3)

[2] Tadayoshi Sakai, Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Leo J. Schowalter, Yoshio Honda, Chiaki Sasaoka, and Hiroshi Amano:"On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR ",Applied Physics Letters ,Accepted for publication ,doi: 10.1063/1.5145017 ,(2020/3)

[3] Daiki Sato, Anna Honda, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, and Hiroshi Amano:"Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode",Micro and Nano Engineering ,223 ,111229 ,(2020/2)

[4] Zheng Ye, Shugo Nitta, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano:"Analysis of Trimethylgallium Decomposition by High-Resolution Mass Spectrometry",Japanese Journal of Applied Physics ,Volume 59, Number 2 ,25511 ,(2020/2)

[5] Daiki Sato, Tomohiro Nishitani, Yoshio Honda, and Hiroshi Amano:"Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum",Journal of Vacuum Science & Technology B ,38 ,12603 ,(2020/1)

[6] Maki Kushimoto, Tadayoshi Sakai, Yoshihiro Ueoka, Shigekazu Tomai, Satoshi Katsumata, Manato Deki, Yoshio Honda, and Hiroshi Amano:"Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering",Phys. Status Solidi A ,Volume 217, Issue 3 ,10.1002/pssa.201900955 ,(2020/1)

[7] S. Abhinay, S. Arulkumaran, G.I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda, and H. Amano:"Improved breakdown voltage in vertical GaN Schottky barrier diodes on freestanding GaN with Mg-compensated drift layer",Japanese Journal of Applied Physics ,Vol 59, No1 ,10906 ,(2020/1)

[8] Lee, DH (Lee, Da-Hoon), Kang, D (Kang, Daesung), Seong, TY (Seong, Tae-Yeon), Kneissl, M (Kneissl, Michael), Amano, H (Amano, Hiroshi) :"Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode",JOURNAL OF PHYSICS D-APPLIED PHYSICS ,Vol.53, No.4, 045106 ,DOI: 10.1088/1361-6463/ab52d0 ,(2020/1)

2019年

[1]Atsushi Tanaka, Syo Inotsume, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, and Hiroshi Amano:"Demonstration of observation of dislocations in GaN by novel birefringence method",physica status solidi (b) ,1900553 ,10.1002/pssb.201900553 ,(2019/12)

[2]Dinh, DV (Dinh, Duc V.), Hu, N (Hu, Nan), Amano, H (Amano, Hiroshi), Honda, Y (Honda, Yoshio), Pristovsek, M (Pristovsek, Markus):"Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire",SEMICONDUCTOR SCIENCE AND TECHNOLOGY ,Vol. 34, No.12, 125012 ,DOI: 10.1088/1361-6641/ab4d2c ,(2019/12)

[3]Ren, F (Ren, Fan), Mishra, KC (Mishra, Kailash C.) Amano, H (Amano, Hiroshi), Collins, J (Collins, John), Han, J (Han, Jung), Im, WB (Im, Won Bin), Kneissl, M (Kneissl, Michael), Seong, TY (Seong, Tae-Yeon), Setlur, A (Setlur, Anant), Suski, T (Suski, Tadek):"Preface-JSS Focus Issue on Recent Advances inWide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki",ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY ,Vol.9, No.1, 010001 ,DOI: 10.1149/2.0452001JSS ,(2019/12)

[4]Kim, JH (Kim, Jong-Ho), Lee, YW (Lee, Yong Won), Im, HS (Im, Hyeong-Seop), Oh, CH (Oh, Chan-Hyoung), Shim, JI (Shim, Jong-In), Kang, D (Kang, Daesung), Seong, TY (Seong, Tae-Yeon), Amano, H (Amano, Hiroshi):"Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type n-Contact and Reflective Bonding Pad",ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY ,Vol.9, No.1, 015021 ,DOI: 10.1149/2.0462001JSS ,(2019/12)

[5]Masahiro Takahashi, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Kevin J. Chen, and Hiroshi Amano:"Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature",physica status solidi (b) ,190554 ,10.1002/pssb.201900554 ,(2019/11)

[6]Ziyi Zhang, Maki Kushimoto, Tadayoshi Sakai, Naoharu Sugiyama, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano:"A 271.8 nm deep-ultraviolet laser diode for room temperature operation",Applied Physics Express ,12 ,1240003 ,(2019/11)

[7]Abhinay Sandupatla, Subramaniam Arulkumaran, Kumud Ranjan , Ng Geok Ing, Peter P Murmu, John Kennedy, Shugo Nitta, Yoshio Honda, Manato Deki and Hiroshi Amano:"Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency",Sensors ,19(23), 5107 ,10.3390/s19235107 ,(2019/11)

[8]Kim, HY (Kim, Ho-Young), Lee, JW (Lee, Jong Woo), Moon, YM (Moon, Young Min), Oh, JT (Oh, Jeong Tak), Jeong, HH (Jeong, Hwan-Hee), Song, JO (Song, June-O), Seong, TY (Seong, Tae-Yeon), Kneissl, M (Kneissl, Michael),Amano,H(Amano,Hiroshi):"Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure",ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY ,Vol.9, No.1, 015014 ,DOI: 10.1149/2.0332001JSS ,(2019/11)

[9]X. Yang, S. Nitta, M. Pristovsek, Y. H. Liu, M. Kushimoto, Y. Q. Liao, Y. Honda, and H. Amano:"Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism",2D Materials ,7 ,15004 ,(2019/10)

[10]Atsushi Tanaka, Kentaro Nagamatsu, Shigeyoshi Usami, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Michal Bockowski, Hiroshi Amano:"V-shaped dislocations in a GaN epitaxial layer on GaN substrate",AIP advances ,9, 095002 ,10.1002/pssb.201900554 ,(2019/9)

[11]F.Piva, C.De Santia, M.Deki, M.Kushimoto, H.Amano, H.Tomozawa, N.Shibata, G.Meneghesso, E.Zanoni, M.Meneghini:"Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects",Microelectronics Reliability ,Vol. 100-101, 113418 ,DOI: 10.1016/j.microrel.2019.113418 ,(2019/9)

[12]Marcin Sarzynski , Ewa Grzanka, Szymon Grzanka, Grzegorz Targowski, Robert Czernecki, Anna Reszka, Vaclav Holy, Shugo Nitta, Zhibin Liu , Hiroshi Amano, and Mike Leszczynski:"ndium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes",Materials ,Vol 12, Issue 16 ,10.3390/ma12162583 ,(2019/8)

[13]Kim, HY (Kim, Ho Young),Lim, CM (Lim, Chang Man), ; Kim, KS (Kim, Ki Seok), ; Oh, JT (Oh, Jeong Tak), ; Jeong, HH (Jeong, Hwan-Hee), ; Song, JO (Song, June-O), Seong, TY (Seong, Tae-Yeon), Amano, H (Amano, Hiroshi):"Via-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes",ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY ,Vol. 8, No.9, Q165 ,DOI: 10.1149/2.0171909jss ,(2019/8)

[14]Jeong-Hwan Park, Jun-Yeob Lee, Mun-Do Park, Jung-Hong Min, Je-Sung Lee, Xu Yang, Seokjin Kang, Sang-Jo Kim, Woo-Lim Jeong, Hiroshi Amano, and Dong-Seon Lee:"Influence of Temperature-Dependent Substrate Decomposition on Graphene for Separable GaN Growth",Advanced Materials Interfaces ,Volume 6, Issue 18 ,10.1002/admi.201900821 ,(2019/7)

[15]Kazuya Takahashi, Ryoji Shinoda, Syun Mitsufuji, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Tomokazu Hattori, Isamu Akasaki, and Hiroshi Amano:"Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology",JAPANESE JOURNAL OF APPLIED PHYSICS ,Vol. 58, No. 7 ,DOI: 10.7567/1347-4065/ab26ad ,(2019/7)

[16]Koji Matsumoto , Toshiaki Ono, Yoshio Honda, Kazuhisa Torigoe, Maki Kushimoto, and Hiroshi Amano:"Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition",Japanese Journal of Applied Physics ,58 ,75502 ,(2019/6)

[17]Yosuke Nagasawa, Kazunobu Kojima, Akira Hirano, Masamichi Ipponmatsu, Yoshio Honda, Hiroshi Amano, Isamu Akasaki, and Shigefusa F. Chichibu:"Comparison of Al x Ga1−x N multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs grown on AlN templates having macrosteps",Applied Physics Express ,Vol.12, No.6, 064009 ,DOI: 10.7567/1882-0786/ab21a9 ,(2019/6)

[18]Evgeniy A. Evropeitsev Yoann Robin Tatiana V. Shubina Si‐Young Bae Shugo Nitta Demid A. Kirilenko Valery Y. Davydov Alexandr N. Smirnov Alexey A. Toropov Maki Kushimoto Sergey V. Ivanov Hiroshi Amano:"Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults",physica status solidi (b) ,Vol. 256, No.6, 1800648 ,DOI: 10.1002/pssb.201800648 ,(2019/6)

[19]Qiang Liu, Naoki Fujimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano:"Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth",JAPANESE JOURNAL OF APPLIED PHYSICS ,Vol. 58, No. SC1055 ,DOI: 10.7567/1347-4065/ab124e ,(2019/6)

[20]Keisuke Uemura, Manato Deki, Yoshio Honda, Hiroshi Amano, and Taketomo Sato:"Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors",JAPANESE JOURNAL OF APPLIED PHYSICS ,Vol. 58, No. SCCD20 ,DOI: 10.7567/1347-4065/ab06b9 ,(2019/6)

[21]Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano:"Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability",Japanese Journal of Applied Physics ,58 ,SCCD25 ,(2019/5)

[22]Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Shugo Nitta, Yoshio Honda, and Hiroshi Amano:"Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates ",Japanese Journal of Applied Physics ,58 ,SCCB24 ,(2019/5)

[23]HU Nan, Duc V. Dinh, Markus Pristovsek, Yoshio Honda, and Hiroshi Amano:"Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers",Japanese Journal of Applied Physics ,58 ,SC1044 ,(2019/5)

[24]Kentaro Nagamatsu, Yuto Ando, Tsukasa Kono, Heajeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano:"Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE",Journal of Crystal Growth ,512 ,78-83 ,(2019/4)

[25]Yoann Robin, François Hemeret, Gillian D’Inca, Markus Pristovsek , Agnès Trassoudaine, and Hiroshi Amano:"Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming",Japanese Journal of Applied Physics ,58 ,SCCC06 ,(2019/4)

[26]Shin-ichiro Sato, Manato Deki, Tohru Nakamura, Tomoaki Nishimura, Daniel Stavrevski, Andrew D. Greentree, Brant C. Gibson, and Takeshi Ohshima:"Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride",Japanese Journal of Applied Physics ,58 ,051011 ,(2019/4)

[27]A. Sandupatla, S. Arulkumaran, G.I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda, and H. Amano:"GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates",AIP Advances ,9, 045007 ,10.1063/1.5087491 ,(2019/4)

[28]Duc V. Dinh, Hirioshi Amano, Markus Pristovsek:"Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE",Journal of Crystal Growth ,Vol.512, 100 ,DOI: 10.1016/j.jcrysgro.2019.02.020 ,(2019/4)

[29]Kneissl, M (Kneissl, Michael), Seong, TY (Seong, Tae-Yeon), Han, J (Han, Jung), Amano, H (Amano, Hiroshi):"The emergence and prospects of deep-ultraviolet light-emitting diode technologies",NATURE PHOTONICS ,Vol.13, No.4, 233 ,DOI: 10.1038/s41566-019-0359-9 ,(2019/4)

[30]E. A. Evropeitsev, Y. Robin, T. V. Shubina, S. Y. Bae, S. Nitta, D. A. Kirilenko, V. Y. Davydov, A. N. Smirnov, A. A. Toropov, M. Kushimoto, S. V. Ivanov, H. Amano: Narrow excitonic lines in core-shell nanorods with InGaN/GaN quantum wells intersected by basal stacking faults, Phys. Status Solidi B 2019, 1800648, 18 March 2019

[31]Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Prostpvsek, Hiroshi Amano: Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy, Journal of Crystal Growth, Volume 509, Pages 50-53, 1 March 2019,

[32]Zhibin Liu, Shugo Nitta, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, Hiroshi Amano: Morphological study of InGaN on GaN substrate by supersaturation, Jornal of Crystal Growth, Volume 508, Pages 58-65,15 February 2019,

[33]Nan HU, Duc Van Dinh, Markus Pristovsek, Yoshio Honda, Hiroshi Amano: How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire, Journal of Crystal Growth,　vol.507, pp205-208, 2019/2/1

[34]Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano: Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown, Applied Physics Express, vol.12, pp.2, 2019/2/1

[35]Jialei Yuan, Yan Jiang, Zheng Shi, Xumin Gao, Yongjin Wang, Xiaojuan Sun, Dabing Li, Yuhuai Liu, Hiroshi Amano: 286nm monolithic multicomponent system, Japanese Journal of Applied Physics 58, 010909, 2019

[36]Y. Robin, E. A. Evropeitsev, T. V. Shubina, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, A. A. Toropov, I. A. Eliseyev, S. Y. Bae, M. Kushimoto, S. Nitta, S. V. Ivanov, H. Amano: Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core–shell nanorods, Nanoscale, 11, 193, 2019

[37]Y. Robin, E. A. Evropeitsev, T. V. Shubina, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, A. A. Toropov, I. A. Eliseyev, S. Y. Bae, M. Kushimoto, S. Nitta, S. V. Ivanov, H. Amano: Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core–shell nanorods, Nanoscale, 11, 193, 2019

[38]Wei Cai, Jialei Yuan, Shuyu Ni, Zheng Shi, Weidong Zhou, Yuhuai Liu, Yongjin Wang, and Hiroshi Amano, GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors, Applied Physics Express 12, 032004, 2019

[39]Mel Hainey Jr., Yoann Robin, Hiroshi Amano, Noritaka Usami: Pole figure analysis from electron backscatter diffraction—an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy, Applied Physics Express 12, 025501, 2019

2018年

[1]Y. Robin, M. Pristovsek, H. Amano, F. Oehler, R. A. Oliver, C. J. Humphreys: What is red? On the chromaticity of orange-red InGaN/GaN based LEDs, Journal of Applied Physics, vol.124, pp.183102, 2018/11/9

[2]entaro Nagamatsu, Yuto Ando, Zheng Ye, Osmane Barry, Atsushi Tanaka, Manato Deki, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano: Comparing high-purity c-and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy, Japanese Journal of Applied Physics, vol.57, pp.105501, 2018/8/30

[3]Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Satoshi Murakami, Maki Kushimoto, Hiroshi Amano: Detailed study of effects of duration of pre-AlN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition, Japanese Journal of Applied Physics, vol.57,　pp.91001, 2018/8/3

[4]Yoann Robin, Yaqiang Liao, Markus Pristovsek, Hiroshi Amano: Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications, Phys. Status Solidi A 2018, vol.215, 1800361(article number), 2018/7/19

[5]Yoshihiro Ueoka, Manato Deki, Yoshio Honda, Hiroshi Amano: Improvement of breakdown voltage of vertical GaN p–n junction diode with Ga2O3 passivated by sputtering, Japanese Journal of Applied Physics, vol.57　(No.7), AP180205RC, 2018/5/31

[6]Ousmane I Barry, Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Markus Pristovsek, Yoshio Honda, Hiroshi Amano: Reduction of Residual Impurities in Homoepitaxial m-Plane (10–10) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy, Phys. Status Solidi RRL 2018, vol.12, Cover Picture1800124, 2018/5/16

[7]Y. Robin, S. Y. Bae, T. V. Shubina, M. Pristovsek, E. A. Evropeitsev, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, A. A. Toropov, V. N. Jmerik, M. Kushimoto, S. Nitta, S. V. Ivanov, H. Amano: Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes, Scientific Reports/nature.com, vol.8, 7311(article number), 2018/5/9

[8]Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa: Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate, Applied Physics Letters, vol.112, 182106, 2018/5/4

[9]Xu Yang, Shugo Nitta, Markus Pristovsek, Yuhuai Liu, Kentaro Nagamatsu, Maki Kushimoto, Yoshio Honda, Hiroshi Amano: Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy, Applied Physics Express, vol.11, pp.51002, 2018/4/5

[10]Jeong-Tak Oh, Sang-Youl Lee, Yong-Tae Moon, Ji Hyung Moon, Sunwoo Park, Ki Yong Hong, Ki Young Song, Chanhyoung Oh, Jong-In Shim, Hwan-Hee Jeong, June-O Song, Hiroshi Amano, Tae-Yeon Seong: Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures, Optics Express, Vol. 26, p.11194, 2018

[11]H Amano, Y Baines, E Beam, Matteo Borga , T Bouchet , Paul R Chalker , M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L Di Cioccio, Bernd Eckardt1, Takashi Egawa, P Fay, Joseph J Freedsman, L Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng Jiang, H Kawai, Dan Kinzer, Martin Kuball, Ashwani Kumar, Kean Boon Lee, Xu Li, Denis Marcon, Martin März, R McCarthy, Gaudenzio Meneghesso, Matteo Meneghini, E Morvan, A Nakajima, E M S Narayanan, Stephen Oliver, Tomás Palacios, Daniel Piedra, M Plissonnier, R Reddy, Min Sun, Iain Thayne, A Torres, Nicola Trivellin, V Unni, Michael J Uren, Marleen Van Hove, David J Wallis, J Wang, J Xie, S Yagi, Shu Yang, C Youtsey, Ruiyang Yu, Enrico Zanoni, Stefan Zeltner, Yuhao Zhang: The 2018 GaN power electronics roadmap, Journal of Physics D, Vol.51, p.163001, 2018

[12]Chuan Qin, Xumin Gao, Jialei Yuan, Zheng Shi, Yuan Jiang, Yuhuai Liu, Yongjin Wang, Hiroshi Amano: Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics, Applied Physics Express, vol. 11, p. 051201, 2018

[13]Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano: Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching, Physica Status Solidi B, Vol. 255, 1700387, 2018

[14]Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano: m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates, Physica Status Solidi A, Vol.215, 1700645, 2018

[15]Kiho Yamada, Yosuke Nagasawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki: Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs, Physica Status Solidi A, Vol.215, 1700525, 2018

[16]Duc V.Dinh, NanHu, YoshioHonda, HiroshiAmano, MarkusPristovsek: High-temperature thermal annealing of nonpolar (1 0 1¯ 0) AlN layers sputtered on (1 01¯ 0) sapphire, Journal of Crystal Growth, Vol. 498, 377, 2018

[7]Geoffrey Avit, Mohammed Zeghouane, Yamina André, Dominique Castelluci, Evelyne Gil, Si-Young Baé, Hiroshi Amano, Agnès Trassoudaine: Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE, CrystEngComm, Vol.20, 6207, 2018

[18]Masahiro Kashima, Daiki Sato, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano, Hokuto Iijima, Takashi Meguro: Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method, Journal of Vacuum Science & Technology B, 36, 06JK02, 2018

[19]Duc V.Dinh, Hiroshi Amano, MarkusPristovsek: MOVPE growth and high-temperature annealing of (101¯0) AlN layers on (101¯0) sapphire, Journal of Crystal Growth, Vol. 502, 14, 2018

[20]Zeghouane, M, Avit, G, Andre, Y, Bougerol, C, Robin, Y, Ferret, P, Castelluci, D, Gil, E, Dubrovskii, VG, Amano, H, Trassoudaine, A: Compositional control of homogeneous InGaN nanowires with the In content up to 90%, Nanotechnology, 30, 044001, 2018

[21]Zeghouane, M, Avit, G, Andre, Y, Bougerol, C, Robin, Y, Ferret, P, Castelluci, D, Gil, E, Dubrovskii, VG, Amano, H, Trassoudaine, A: Compositional control of homogeneous InGaN nanowires with the In content up to 90%, Nanotechnology, 30, 044001, 2018

[22] Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano: "m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates", physica status solidi a, vol215, Issue 9, 1700645, (2017/10 (2018/5))

[23] Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Si-Young Bae, Ho-jun Lee, Yu-Huai Liu, Markus Pristovsek, Yoshio Honda, and Hiroshi Amano: "Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metal-organic vapor phase epitaxy", Journal of Crystal Growth, Vol.482, 1-8, (2018/01)

[7] Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Si-Young Bae, Ho-JunLee, Yuhuai Liu, Markus Pristovsek, Yoshio Honda, Hiroshi Amano: "Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy", Journal of Crystal Growth, Vol.482, pp.1-8, (2018/01)

2017年

[1] Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano: "Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching", Phys. Status Solidi B, Vol.254 , 1700387, (2017/11)

[2] Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano: "DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy", Applied Physics Letters, Vol.111, pp.141602/1-5, (2017/10)

[3] Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano: "Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes", Applied Physics Letters, Vol.111, pp.122102/1-5, (2017/09)

[4] H.Kawai, S.Yagi, S.Hirata, F.Nakamura, T.Saito, Y.Kamiyama, M.Yamamoto, H.Amano, V.Unni, and E.M.S.Narayanan: "Low cost high voltage GaN polarization superjunction field effect transistors", physica status solidi a, Vol.214 No.8, pp.1600834/1-10, (2017/08)

[5] Shigeyoshi Usami, Ryosuke Miyagoshi, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, and Hiroshi Amano: "Effect of dislocations on the growth of p-type GaN and on the characteristics of p–n diodes", physica status solidi a, Vol.214 No.8, pp.11600837/1-5, (2017/08)

[6] Atsushi Tanaka, Ousmane1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano: "Facet dependence of leakage current and carrier concentration in m-lane GaN Schottky barrier diode fabricated with MOVPE", physica status solidi a, vol.214, Issue 8, 1600829, (2017/7)

[7] Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, and Hiroshi Amano: "Decomposition of trimethylgalliumand adduct formation in ametalorganic vapor phase epitaxyreactor analyzed by high-resolution gasmonitoring system", Phys. Status Solidi B, Vol.254, Issue 8, 1600737, (2017/06)

[8] Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda and Hiroshi Amano: "Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations", Applied Physics Express, Vol.10, pp.082101/1-4, (2017/06)

[9] Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano: "Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity", Applied Physics Letters, Vol.110, pp.262105/1-5, (2017/06)

[10] S.-Y.Bae, K.Lekhal, H.-J.Lee, T.Mitsunari, J.-W.Min, D.-S.Lee, M.Kushimoto, Y.Honda, H.Amano: "Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer", Journal of Crystal Growth, Vol.468, pp.110-113, (2017/06)

[11] Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki Kushimoto, Yoshio Honda, Hiroshi Amano: "Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer", Journal of Crystal Growth, Vol.468, pp.547-551, (2017/06)

[12] Ousmane I Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano: "Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers", Journal of Crystal Growth, Vol.468, pp.552-556, (2017/06)

[13] H.Iwata, H.Kobayashi, T.Kamiya, R.Kamei, H.Saka, N.Sawaki, M.Irie, Y.Honda, H.Amano: "Annealing effect on threading dislocations in a GaN grown on Si substrate", Journal of Crystal Growth, Vol.468, pp.835-838, (2017/06)

[14] Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano: "A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer", Journal of Crystal Growth, Vol.468, pp.866-869, (2017/06)

[15] Michiko Kaneda, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki: "Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output", Japanese Journal of Applied Physics, Vol.56, pp.061002/1-9, (2017/06)

[16] Si-Young Bae, Kaddour Lekhal, Ho-Jun Lee, Jung-Wook Min, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano: "Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants", Phys. Status Solidi B, Vol.254, Issue 8, 1600722, (2017/04)

国内学会・口頭発表

2020年

[1]冨田大輔,"PVT properties of the ammonia + ammonium halide mixtures",properties of the ammonia + ammonium halide mixtures ,日本化学会, 千葉県野田市, 2PC-04, 2020/3/23

[2]古澤優太、 Orysia Zaremba、大野雄高、本田善央、天野浩,"深紫外LED 電極に向けたカーボンナノチューブの仕事関数制御",第67回応用物理学会春季学術講演会 , 応用物理学会, 東京都千代田区, 15a-A403-3, 2020/3/15

[3]蔡　文トウ、久志本真希、出来真斗、田中敦之、新田州吾、本田善央、天野浩,"表面積制御によるマイクロプレート型多色発光LEDの同時成長",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 15a-A302-6, 2020/3/15

[4]酒井忠慶、久志本真希、張梓懿、杉山直治、本田善央、笹岡千秋、天野浩,"ALD 法によりDBR を形成されたAlGaN UVC LD の室温パルス発振",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 15p-A302-12, 2020/3/15

[5]佐藤大樹、本田杏奈、小泉淳、西谷智博、本田善央、天野浩,"InGaN 半導体フォトカソードにおける量子効率のInGaN 膜厚依存性",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 15a-D215-11, 2020/3/15

[6]本田善央、田中敦之、川崎晟也、出来真斗、天野浩,"GaN によるpn 接合ダイオード中の欠陥観察と逆方向リーク電流源の解明",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 14p-A201-7, 2020/3/14

[7]大西一生、天野裕己、藤元直樹、新田州吾、本田善央、天野浩,"MgOを用いたMg添加GaNのハライド気相成長",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 14p-A302-10, 2020/3/14

[8]天野裕己、大西一生、藤元直樹、渡邉浩崇、新田州吾、本田善央、天野浩,"HVPE 法による不純物含浸セラミックスを用いたMg 添加GaN 成長",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 14p-A302-11, 2020/3/14

[9]川崎晟也、安藤悠人、田中敦之、塚越真悠子、谷川智之、出来真斗、久志本真希、新田州吾、本田善央、天野浩,"GaN 縦型p-n ダイオードにおける2 光子吸収光電流の測定",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 14a-B401-7, 2020/3/14

[10]安藤悠人、中村徹、出来真斗、田岡紀之、渡邉浩崇、田中敦之、新田州吾、本田善央、山田永、清水三聡、天野浩,"ゲート電極形成プロセスがAl2O3/GaN 界面特性に与える影響",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 13a-B401-5, 2020/3/13

[12]呉東臨、叶正、新田州吾、本田善央、Markus Pristovsek、天野浩,"MIn と金属Ga のトランスメタル化によるTMGa 生成の高分解能質量分析",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 13p-A302-9, 2020/3/13

[13]山田剛大、安藤悠人、渡邉浩崇、古澤優太、出来真斗、田中敦之、新田州吾、本田善央、須田淳、天野浩,"GaN:C半絶縁層を用いた圧電駆動GaNカンチレバーの作製",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 13p-A302-8, 2020/3/13

[14]渡邉浩崇、新田州吾、安藤悠人、出来真斗、田中敦之、本田善央、天野浩,"GaN 基板のオフ角度とMOVPE 成長ステップバンチングとの相関",第67回応用物理学会春季学術講演会 ,応用物理学会, 東京都千代田区, 12a-A302-1, 2020/3/12

[15]田中敦之,"多光子PL顕微鏡によるGaN結晶中の転位観察及び電界分布観察",第五回セラミックコーティング研究体研究会 ,⽇本セラミックス協会, 兵庫県神戸市 ,2020/3/2

[16]天野浩,"En Route to Realize Zero Carbon Emission",第18回ナノテクノロジー総合シンポジウム（JAPAN NANO 2020）, JAPAN NANO 2020事務局, 東京都, 2020/1/31

[17]西谷　智博,"半導体材料・機能性表面・光励起・ビーム物理の技術融合が実現する電子ビームイノベーション",電子情報通信学会システムナノ技術に関する特別研究専門委員会 (SNT)　第3回研究会 ,電子情報通信学会システムナノ技術に関する特別研究専門委員会 (SNT) ,東京都新宿区 ,2020/1/31

[18]天野浩,"ペインキラーとしての窒化物半導体紫外線発光素子",第３回「深紫外LEDで創生される産業連鎖」フォーラム ,三重大学, 三重県津市, 2020/1/24

[19]西谷　智博,"電子ビームの技術刷新で挑む損傷敏感試料・動態・反応の微細領域観測",第２３８回　有機エレクトロニクス材料研究会「有機半導体、タンパク質の電子状態を動的に捉える」 ,有機エレクトロニクス材料研究会 ,愛知県名古屋市 ,A4-2p,2020/1/22

2019年

[1]新田　州吾,"窒化物半導体結晶成長解析用ソフトウェアの活用方法‐ HVPE法やMOVPE法での窒化物結晶成長解析 -",STR Japan 結晶成長解析セミナー2019 ,STR Japan ,神奈川県横浜市 , 2019/12/10

[2]天野浩,"開発が進むAlGaN系半導体による深紫外線発光素子とその応用",第34回日本国際保健医療学会学術大会 ,日本国際保健医療学会, 三重県津市, 2019/12/8

[3]三浦史也、安藤悠人、高橋昌大、出来真斗、田中敦之、渡邉浩崇、久志本真希、新田州吾、本田善央、天野浩,"p-GaN エピ層中に Si イオン注入により形成した n-GaN の電気特性評価 ",先進パワー半導体分科会第6回講演会 ,応用物理学会　先進パワー半導体分科会 ,広島県広島市 ,IIB-22, 2019/12/4

[4]大西一生、天野裕己、藤元直樹、新田州吾、本田善央、天野浩,"ハライド気相成長法を用いた高純度GaN成長",先進パワー半導体分科会第6回講演会 ,応用物理学会　先進パワー半導体分科会 , 広島県広島市 ,IA-18,(2019/12/3)

[5]安藤悠人、中村徹、出来真斗、田岡紀之、田中敦之、渡邉浩崇、久志本真希、新田州吾、本田善央、山田永、清水三聡、天野浩,"ゲート電極形成プロセスがAl2O3/GaN界面およびチャネル特性に与える影響",先進パワー半導体分科会第6回講演会 ,応用物理学会　先進パワー半導体分科会 ,広島県広島市 ,IA-22, 2019/12/3

[6]S. Schimmel, T. Steigerwald, M. Koch, P. Macher, P. Duchstein, A.-C. L. Kimmel, N. S. A. Alt, D. Zahn, R. Niewa, E. Schlücker, P. Wellmann,"In situ x-ray monitoring of ammonothermal reaction processes for advancing the understanding of AT GaN growth",第16回赤崎シンポジウム ,名古屋大学赤﨑記念研究センター ,愛知県名古屋市,2019/11/29

[7]西谷　智博,"半導体フォトカソードで実現する１ショット電子顕微鏡",イメージング研究会「〜基礎物理から産業応用まで〜」 ,愛知県名古屋市 ,(2019/11/29)

[8]大西一生、天野裕己、藤元直樹、新田州吾、本田善央、天野浩,"ハライド気相成長法を用いた高純度GaN成長",第３回電子材料若手交流会研究会 ,電子材料若手交流会（ISYSE）,茨城県つくばみらい市 ,(2019/11/3)

[9]本田善央、久志本　真希、田中　敦之、新田　州吾、出来　真斗、天野　浩,"窒化物半導体の可能性",ポストLEDフォトニクス公開シンポジウム2019 ,徳島大学　ポストLEDフォトニクス研究所 ,徳島県南常三島町 ,(2019/10/15)

[10]山田剛大、安藤悠人、渡邉浩崇、出来真斗、田中敦之、新田州吾、久志本真希、本田善央、天野浩 ,"Photoelectrochemical Etching for GaN MEMS　（GaN MEMS 作製に向けた光電気化学エッチングの検討）",第39回電子材料シンポジウム ,電子材料シンポジウム委員会 ,奈良県橿原市 ,Fr2-6, (2019/10/11)

[11]隈部岳瑠、小倉昌也、田中敦之、安藤悠人、渡邉浩崇、宇佐美茂佳、出来真斗、新田州吾、本田善央、天野浩,"エピタキシャルリフトオフ法によって作製された二次元正孔ガスを有するエミッタトップ型GaN-HBT",応用物理学会秋季学術講演会 , 応用物理学会,北海道札幌市 ,21a-E301-5, (2019/9/21)

[12]田中敦之、伊ケ崎泰則、河口大祐、和仁陽太郎、垣之内啓介、今西正幸、渡邉浩崇、本田善央、森勇介、天野浩,"レーザ剥離技術を用いて剥離したGaN基板の評価",応用物理学会秋季学術講演会 ,応用物理学会 ,北海道札幌市 ,21a-E310-10, (2019/9/21)

[13]田中敦之、伊ケ崎泰則、天野浩,"レーザ剥離技術を用いたGaN基板再生手法",応用物理学会秋季学術講演会 ,応用物理学会 ,北海道札幌市 ,21a-E310-9, (2019/9/21)

[14]安藤悠人、中村徹、出来真斗、田岡紀之1、田中敦之、渡邉浩崇久志本真希、新田州吾、本田善央、山田永、清水三聡、天野浩,"GaN横型MISFETにおけるチャネル移動度に対する界面準位密度の影響2",応用物理学会秋季学術講演会 ,応用物理学会 ,北海道札幌市 ,20a-E301-10,(2020/9/20)

[15]田中敦之、安藤悠人、高橋昌大、三浦史也、川崎晟也、渡邉浩崇、久志本真希、出来真斗、新田州吾、本田善央、天野浩,"GaNパワーデバイスの実用化に向けた準備状況について",応用物理学会秋季学術講演会 ,応用物理学会 ,北海道札幌市 ,19p-B01-4, (2019/9/19)

[16]安田優斗、宇佐美茂佳、田中敦之、天野浩、加藤正史,"ＧａＮ縦型pnダイオード内部のキャリア寿命・ＥＬ分布",応用物理学会秋季学術講演会 ,応用物理学会 ,北海道札幌市 ,19a-E301-4, (2019/9/19)

[17]高橋昌大、田中敦之、安藤悠人、渡邉浩崇、出来真斗、久志本真希、新田州吾、本田善央、Kevin J. Chen、天野浩,"GaNへの高温Mg/Fイオン共注入によるグリーンルミネッセンスの抑制",応用物理学会秋季学術講演会 ,応用物理学会 ,北海道札幌市 ,18p-N302-12, (2019/9/18)

[18]酒井忠慶、久志本真希、本田善央、天野浩,"エッチング法を用いたAlGaN UV-C レーザーの光共振器作製",応用物理学会秋季学術講演会 ,応用物理学会 ,北海道札幌市 ,18a-E310-4, (2019/9/18)

[19]天野浩,"産業競争力の鍵を握るプロセスインフォマティクスの展開とスパコン「富岳」の役割",ポスト「京」重点課題（７）「次世代の産業を支える新機能デバイス・高性能材料の創成」第5回シンポジウム ,東京大学物性研究所, 東京都, 2019/8/9

[20]天野浩,"ロボットを効率よく駆動させる次世代半導体",福岡県ロボット・システム産業振興会議 , 福岡県, 福岡県福岡市, 2019/7/30

[21]安藤悠人、中村徹、出来真斗、渡邉浩崇、田中敦之、久志本真希、新田州吾、本田善央、天野浩,"GaN 基板上横型MIS FET における移動度の面方位依存性",第11回ナノ構造・エピタキシャル成長講演会 ,日本結晶成長学会ナノ構造・エピタキシャル成長分科会 ,広島県東広島市 ,Fr-P25, (2019/6/14)

[22]天野浩,"ゼロエミッション社会構築の取り組み",九州地域循環共生圏シンポジウム ,環境省, 福岡県福岡市, 2019/5/18

[23]天野浩,"健康長寿社会を支えるトランスフォーマティブエレクトロニクス",第30回日本医学会総会2019中部 ,日本医学会総会2, 愛知県名古屋市, 2019/4/27

[24]天野浩,"世界を照らすLED",第71回日本産科婦人科学会学術講演会 ,日本産科婦人科学会会, 愛知県名古屋市, 2019/4/23

[25]佐藤大樹、西谷智博、本田善央、天野浩, 窒素暴露した半導体フォトカソードの加熱処理に伴う表面機能変化, 第66回　応用物理学会春季学術講演会, 東京工業大学大岡山キャンパス, 東京, 12a-W834-5, 2019/3/12

[26]久志本真希，酒井忠慶、出来真斗、本田善央、天野浩, RFスパッタ法を用いたMgZnOの熱処理効果, 第66回　応用物理学会春季学術講演会, 東京工業大学大岡山キャンパス,　東京, 10a-S011-7, 2019/3/10

2018年

[1]天野　浩,　トランスフォーマティブエレクトロニクスが築く４S社会,　名古屋大学,　愛知,　2018/12/27

[2]本田善央、宇佐美茂佳、田中敦、天野浩、窒化物半導体pnダイオードのエミッション顕微鏡観察, 第30 回半導体ワークショップ、ホテルクラウンパレス浜松、静岡, 2018/12/26

[3]Michal Stanislaw Bockowski. Bulk GaN - prospects for J-P cooperation. 日本－ポーランド　結晶科学ワークショップ. ヴィサージュ（石川県金沢市）. 2018/11/17

[4]厳瑾，高橋昌大，出来真斗，田中敦之、久志本真希，新田州吾，本田善央，永山勉，天野浩, Ga面へMgイオン注入を行ったGaNへのフラッシュランプアニール効果(Effect of Flash Lamp Anneal in Mg ion implanted layers form on Ga-face of GaN), 先進パワー半導体分科会, 京都テルサ, 京都, IA-12, 2018/11/6

[5]安藤悠人, 中村徹, 出来真斗, 田中敦之, 宇佐美茂佳, Ousmane 1 Barry,　久志本真希, 新田州吾, 本田善央, 天野浩, GaN基板上横型MISFETにおける移動度の面方位依存性（The plane orientation dependence of mobility in lateral MISFET fabricated on GaN substrate.）, 先進パワー半導体分科会, 京都テルサ, 京都, IA-26, 2018/11/6

[6]天野　浩,　世界を照らすLED,　第65回日本泌尿器科学会中部総会, 名古屋国際会議場,　愛知,　2018/10/5

[7]久志本真希，酒井忠慶、古澤優太、出来真斗、本田善央、天野浩. RF スパッタ法を用いた紫外透過 MgZnO 透明導電膜の作製. 日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム. 東京大学. 東京. 2018/9/27

[8]酒井忠慶、久志本真希、出来真斗、本田善央, 天野浩. 深紫外透明電極応用に向けたMgZnO薄膜の組成制御. 日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム. 東京大学. 東京. 2018/9/27

[9]安藤悠人, 中村徹, 出来真斗, 田中敦之, 宇佐美茂佳, Ousmane 1 Barry, 久志本真希, 新田州吾, 本田善央, 天野浩, GaN 基板上横型MIS FET における移動度の面方位依存性, 第79回応用物理学会　秋季学術講演回, 名古屋国際会議場, 愛知, 21a-331-5, 2018/9/21

[10]田中敦之, 宇佐美茂佳, 福島颯太, 安藤悠人, 久志本真希, 出来真斗,　新田州吾, 本田善央, 天野浩, GaNデバイスのキラーとなる転位欠陥とその低減法, 第79回応用物理学会秋季学術講演会, 名古屋国際会議場, 愛知, 20p-CE-2, 2018/9/20

[11]宇佐美茂佳、福島颯太、安藤悠人、田中敦之、久志本真希、出来真斗、新田州吾、本田善央、天野浩, GaN自立基板上pnダイオード逆方向リーク電流の成長条件依存性II, 第79回応用物理学会　秋季学術講演回, 名古屋国際会議場, 愛知, 20p-331-2, 2018/9/20

[12]福島颯太、宇佐美茂佳、安藤悠人、田中敦之、出来真斗、久志本真希、新田州吾、本田善央、天野浩, アバランシェ降状現象観測可能な垂直深掘りメサ型pnダイオードの電気的特性評価, 第79回応用物理学会　秋季学術講演回, 名古屋国際会議場, 愛知, 20p-331-1, 2018/9/20

[13]Qiang Liu, Naoki Fujimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, CFD simulation study of the gas flow balance in a new vertical HVPE reactor for low cost bulk GaN crystal growth, 第79回応用物理学会　秋季学術講演回, 名古屋国際会議場, 愛知, 19p-PA4-20, 2018/9/19

[14]高橋昌大, 田中敦之, 宇佐美茂佳, 安藤悠人, 出来真斗, 久志本真希, 新田州吾, 本田善央, 天野浩, 高温でMgイオン注入されたGaNの特性評価, 第79回応用物理学会　秋季学術講演回, 名古屋国際会議場, 愛知, 19p-CE-17, 2018/9/19

[15]Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda1, and Hiroshi Amano, Crystal plane dependence of interface states density in c- and m-plane GaN MOS capacitors, 第79回応用物理学会　秋季学術講演回, 名古屋国際会議場, 愛知, 19p-CE-2, 2018/9/19

[16]佐藤大樹，西谷智博、本田善央、天野浩, 大気暴露したGaN 半導体フォトカソードの加熱処理に伴う表面状態の光電子分光観測, 第79回応用物理学会　秋季学術講演回, 名古屋国際会議場, 愛知, 18p-431B-11, 2018/9/18

[17]伊佐雄太、斉藤武尊, 中村文彦, 神山祐輔, 八木修一, 河合弘治、田中敦之, 本田善央, 天野浩. '1.2kV級ノーマリーオフGaN-PSJ FET(1.2kV class Normally-off GaN Polarization Super Junction (PSJ) Transistors). 第79回応用物理学会　秋季学術講演回. 名古屋国際会議場. 愛知. 2018/9/18

[18]天野　浩,　世界を照らすLED,　第56回日本生物物理学会年会　市民講演会, 岡山大学,　岡山,　2018/9/16

[19]出来真斗，安藤悠人，渡邉浩崇，田中敦之，久志本真希，新田州吾，本田善央，天野浩, オフ角を有するm面GaN基板上GaN-MOSキャパシタの界面準位評価, 第10回ﾅﾉ構造･ｴﾋﾟﾀｷｼｬﾙ成長講演会, 名古屋大学, 愛知, Fr-P22, 2018/7/13

[20]田中敦之，永松謙太郎，久志本真希，出来真斗，新田州吾，本田善央，天野浩, 多光子PL顕微鏡による窒化ガリウム中転位の三次元観察, 第10回ﾅﾉ構造･ｴﾋﾟﾀｷｼｬﾙ成長講演会, 名古屋大学, 愛知, Fr-P23, 2018/7/13

[21]宇佐美茂佳，安藤悠人，福島颯太，田中敦之，出来真斗，久志本真希，新田州吾，本田善央，天野浩, GaN自立基板上pnダイオードにおけるリーク電流のMOCVD成長圧力依存性, 第10回ﾅﾉ構造･ｴﾋﾟﾀｷｼｬﾙ成長講演会, 名古屋大学, 愛知, Fr-P20, 2018/7/13

[22]Qiang Liu, Naoki Fujimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Parasitic deposition inhibition with barrier gas in a New Vertical HVPE Reactor with Showerhead Nozzle, 第10回ﾅﾉ構造･ｴﾋﾟﾀｷｼｬﾙ成長講演会, 名古屋大学, 愛知, Fr-P7, 2018/7/13

[23]安藤悠人，永松謙太郎，田中敦之，宇佐美茂佳，出来真斗，久志本真希，新田州吾，本田善央，天野浩, m面GaN基板上SBDにおける障壁高さの金属仕事関数依存性, 第10回ﾅﾉ構造･ｴﾋﾟﾀｷｼｬﾙ成長講演会, 名古屋大学, 愛知, Fr-P21, 2018/7/13

[24]福島颯太，安藤悠人，宇佐美茂佳，田中敦之，出来真斗，久志本真希，新田州吾，本田善央，天野浩, GaN 縦型pnダイオードの垂直メサ型耐圧構造評価, 第10回ﾅﾉ構造･ｴﾋﾟﾀｷｼｬﾙ成長講演会, 名古屋大学, 愛知, Fr-P19, 2018/7/13

[25]新田州吾，田中敦之，出来真斗，本田善央，天野浩, GaNパワーデバイスに向けた自立基板およびエピタキシャル成長技術の進展と課題, （独）日本学術振興会結晶成長の科学と技術第161委員会第106回研究会「 2025年結晶産業の未来　―　パワーデバイス編　―」, 名古屋大学, 愛知, 2018/7/6

[26] Qiang LIU, Naoki Fujimoto, Shugo Nitta, Yashio Honda, Hiroshi Amano, "Study of showerhead nozzle configuration in vertical HVPE reactor for large size bulk GaN crystal growth", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-E202-4, (43177)

[27] 叶正, 新田州吾, 永松謙太郎, 本田善央, 天野浩, "高分解能質量分析によるⅢ族窒化物半導体気相成長のためのアンモニア分解及び反応の解析", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 17p-E202-15, (2018/03/17-20)

[28] 安藤悠人, 永松謙太郎, 田中敦之, 宇佐美茂佳, バリーウスマン1, 出来真斗, 久志本真希, 新田州吾, 本田善央, 天野浩, "m面GaN基板上SBDにおける障壁高さの金属仕事関数依存性", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-2, (2018/03/17-20)

[29] 宇佐美茂佳, 福島颯太, 安藤悠人, 田中敦之, 永松謙太郎, 久志本真希, 出来真斗, 新田州吾, 本田善央, 天野浩, "GaN自立基板上pnダイオード逆方向リーク電流の成長条件依存性", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-4, (2018/03/17-20)

[30] 宇佐美茂佳, 菅原義弘, 姚永昭, 石川由加里, 間山憲仁, 戸田一也, 安藤悠人, 田中敦之, 永松謙太郎, 久志本真希, 出来真斗, 新田州吾, 本田善央, 天野浩, "3DAPおよびLACBED法によるGaN自立基板上pnダイオードのリークの起源調査", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-5, (2018/03/17-20)

[31] 田中大睴, 永松謙太郎, 山田永, 山田寿一, 熊谷義直, 新田州吾, 本田善央, 清水三聡, 天野浩, "HVPE法によるAIGaNの薄膜成長", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-E202-8, (2018/03/17-20)

[32] 田中敦之, 宇佐美茂佳, 安藤悠人, 永松謙太郎, 久志本真希, 出来真斗, 新田州吾, 本田善央, 天野浩, "GaN中転位の三次元観察と転位がパワーデバイスに与える影響", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 19p-E202-6, (2018/3/19)

[33] 出来真斗, 曾根和詩, 永松謙太郎, 田中敦之, 久志本真希, 新田州吾, 本田善央, 天野浩, "GaN表面への酸化プロセスがALD-Al2O3/GaN界面の電気特性に与える影響", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18p-C302-3, (2018/03/18)

[34] 上岡義弘, 出来真斗, 本田善央, 天野浩, "Ga2O3保護膜による縦型GaNダイオードの耐圧向上", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-7, (2018/03/18)

[35] 佐藤真一郎, 出来真斗, 中村徹, 大島武, "窒化ガリウム半導体に高温イオン注入したプラセオジム(Pr)の発光観測", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-7, (2018/03/18)

[36]酒井忠慶, 久志本真希, 出来真斗, 本田善央, 天野浩, 深紫外透明電極応用に向けたMgZnO 薄膜の吸収端制御 Controlling MgZnO absorption edge toward deep-UV transparent electrode application, 第66回　応用物理学会春季学術講演会, 東京工業大学大岡山キャンパス,　東京, 11p-S011-12, 2019/3/11

[37]宇佐美　茂佳、田中　敦之、福島颯太、安藤　悠人、出来　真斗、新田　州吾、本田　善央、天野　浩, 深堀メサ型 GaN 縦型 pnダイオード絶縁破壊電界の貫通転位密度依存性, 第66回　応用物理学会春季学術講演会, 東京工業大学大岡山キャンパス,　東京, 10a-M121-2, 2019/3/10

[38]川崎晟也，福島颯太，宇佐美茂佳，安藤悠人，田中敦之，出来真斗，久志本真希，新田州吾，本田善央，天野浩, サブバンドギャップ光を用いたGaN中二次元電界マッピング手法の提案, 第66回　応用物理学会春季学術講演会, 東京工業大学大岡山キャンパス,　東京, 10a-M121-3, 2019/3/10

[39]大山　武浩、叶　正、久志本　真希、新田　州吾、本田　善央、天野　浩, 飛行時間型質量分析法を用いたトリメチルアルミニウムとアンモニアの気相反応分析, 第66回　応用物理学会春季学術講演会, 東京工業大学大岡山キャンパス,　東京, 10a-W541-2, 2019/3/10

[40]天野　浩,　何故青色LEDは日本で生まれたか,　第66回応用物理学会春季学術講演会,　東京工業大学,　東京,　2019/3/9

[41]安藤悠人, 中村徹, 出来真斗, 宇佐美茂佳, 田中敦之, 渡邉浩崇, 久志本真希, 新田州吾, 本田善央, 天野浩, GaN 横型MISFET チャネル移動度に対する界面準位の影響, 第66回　応用物理学会春季学術講演会, 東京工業大学大岡山キャンパス,　東京, 9p-M121-9, 2019/3/9

[42]宇佐美　茂佳、田中　敦之、福島颯太、安藤　悠人、出来　真斗、新田　州吾、本田　善央、天野　浩, GaN 自立基板上pnダイオードの逆方向リーク電流とナノパイプ壁面に存在する不純物との関係, 第66回　応用物理学会春季学術講演会, 東京工業大学大岡山キャンパス,　東京, 9a-W541-11, 2019/3/9

[43]宇佐美　茂佳、田中　敦之、間山憲仁, 戸田一也, 菅原義弘, 姚永昭, 石川由加里、安藤　悠人、出来　真斗、新田　州吾、本田　善央、天野　浩, GaN 自立基板上pn ダイオードの逆方向リーク電流と貫通螺旋転位周りに存在するMg との関係, 第66回　応用物理学会春季学術講演会, 東京工業大学大岡山キャンパス,　東京, 9a-W541-10, 2019/3/9

[44] 本田善央, 宇佐美茂佳, 天野浩, "光電流測定によるLED内部量子効率評価, 学振162委員会第107回研究会", 上智大学, 東京, (2018/3/5)

[45] 本田善央, 宇佐美茂佳, 加藤雅人, 佐藤大樹, 西谷智博, 天野浩, "レーザー散乱を用いた InGaN成長のその場観察", 第13回励起ナノプロセス研究会, 淡路夢舞台国際会議場, 兵庫県, (2018/1/20)

2017年

[1] 河野司, 久志本真希, 永松謙太郎, 新田州吾, 本田善央, 天野浩, "-c面GaN基板上のGaNのMOVPE成長における酸素低減の研究", 電子情報通信学会電子デバイス研究会, 名古屋工業大学, 愛知, ED2017-53, (2017/11/30)

[2] 田中敦之, 宇佐美茂佳, 安藤悠人, 永松謙太郎, 新田州吾, 本田善央, 天野浩, "多光子PLを用いたGaN・GaNエピ層中の転位観察", 第46回結晶成長国内会議, ホテルコンコルド浜松,　静岡, 27a-C05, (2017/11/27)

[3] 天野浩, "Transformative Electronicsが築く未来社会, 先進パワー半導体分科会", 名古屋国際会議場, 愛知, (2017/11/2)

[3] 天野浩, "トランスフォーマティブエレクトロニクスが支える新しいモビリティシステム", IEEE Metro Area Workshop in Nagoya (MAW2017), 中京大学, 愛知, (2017/10/8)

[5] 天野浩, "Transformative Electronicsが拓く未来社会", 電子情報通信学会創立100周年記念事業　東海支部講演会, 名古屋大学, 愛知, (2017/9/26)

[6] 佐藤真一郎, 岡田浩, 出来真斗, 中村徹, 若原昭浩, 大島武, "窒化ガリウム中の単一希土類元素からの発光観測を目指したイオン注入法および熱処理条件の検討", 第78回応用物理学会秋季学術講演会, 福岡国際会議場, 福岡, 8a-A414-1, (2017/09/08)

[7] 宇佐美茂佳, 福島颯太, 安藤悠人, 田中敦之, 永松謙太郎, 久志本真希, 出来真斗, 新田州吾, 本田善央, 天野浩, "転位密度の異なるGaN自立基板上PNダイオードのキラー転位解析", 第78回応用物理学会　秋季学術講演会, 福岡国際会議場, 福岡, 6a-C17-6, (2017/9/5-8)

[8] Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Yoshio Honda, Hiroshi Amano, "The effect of the environment temperature of the wafer on InGaN grown by metalorganic vapor phase epitaxy", 第78回応用物理学会　秋季学術講演会, 福岡国際会議場, 福岡, 8a-A301-8, (2017/9/5-8)

[9] 安藤悠人, 永松謙太郎, 田中敦之, 宇佐美茂佳, バリーウスマン1, 出来真斗, 久志本真希, 新田州吾, 本田善央, 天野浩, "オフ角の異なるm 面GaN 基板上Si ドープ厚膜SBD", 第78回応用物理学会　秋季学術講演会, 福岡国際会議場, 福岡, 5p-C17-6, (2017/9/5-8)

[10] 小倉昌也, 安藤悠人, 宇佐美茂佳, 田中敦之, 出来真斗, 本田善央, 八木修一, 河合弘治, 天野浩, "ソース電極をショットキー接合としたノーマリーオフ型PSJの設計", 第78回応用物理学会秋季学術講演会, 福岡国際会議場, 福岡, 7p-S22-11, (2017/9/5-8)

国際学会・口頭発表

2020年

2019年

[1]Atsushi Tanaka, Yasunori Igasaki, and Hiroshi Amano, "Laser slicing techniques for cutting out GaN substrate", The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), ThP-GR-10 Kunigami, Okinawa, Japan, APWS2019 Committee, 2019/11/14

[2]Hiroshi Amano, "Wide-bandgap semiconductors as key materials in realizing zero emission of greenhouse gases", The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019）, Okinawa, Japan, APWS2019 Committee, 2019/11/12

[3]Maki Kushimoto, Tadayoshi Sakai, Manato Deki, Yoshio Honda, and Hiroshi Amano, "Crystal structure of MgZnO deposited by RF sputtering", The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), TuP-GR-17, Kunigami, Okinawa, Japan, APWS2019 Committee, 2019/11/12

[4]Geoffrey Avit, Yoann Robin, Mohammed Zeghouane, Léo Mostéfa, Boris Michalska, Yamina Andre, Dominique Castelluci, Agnès Trassoudaine and Hiroshi Amano, "Synthesis of InGaN nanowires and nanostructures to achieve high indium content and high crystal quality for optoelectronic devices", ICMaSS2019, A3-Ⅲ-8 (1079), Nagoya, Aichi, Japan, IMaSS, 2019/11/3

[5]Geoffrey Avit, Yoann Robin, Yaqiang Liao, Shugo Nitta and Hiroshi Amano, "Synthesis and properties of GaN nanorods with axial InGaN/GaN quantum wells defined by nanoimprint lithography", Korea University,　Invited Seminar, Seoul, Korea, Korea University, 2019/10/22

[6]Hiroshi Amano, "Enroute to realize zero carbon emission 　 Nobel Teacher Summit", Stockholm, Sweden, Nobel Foundation, 2019/10/11

[7]Daisuke Tomida, Tohru Yoshinaga, Chiaki Yokoyama, "THERMAL CONDUCTIVITY MEASUREMENTS OF LIQUID AMMONIA BY THE TRANSIENT SHORT-HOT-WIRE METHOD", ATPC2019, P26, Xi'an, Shaanxi. China, Xi'an Jiaotong University, 2019/10/4

[8]D. Sato, T. Nishitani, A. Koizumi, Y. Honda, H. Amano, "Excitation power density dependence of photocurrent from InGaN photocathode Micro & Nano Engineering", (MNE)2019 A7-4, "Rodos, Greece", MNE Committees, 2019/9/26

[9]Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hisashi Yamada, Mitsuaki Shimizu, Hiroshi Amano, "Effect of interface state density on channel mobility in GaN lateral MISFET.", SemiconNano 2019, P-23, Kobe, Hyogo, Japan, SemiconNano 2019 Committee, 2019/9/25

[10]Yoshio Honda, Shigeyoshi Usami, Atsushi Tanaka, Hiroshi Amano, "The relationship between nanopipe formation of GaN and PN diode leakage current", SemiconNano 2019, O-01, Kobe, Hyogo, Japan, SemiconNano 2019 Committee, 2019/9/24

[11]Hiroshi Amano, "Transformative Electronics for Establishing Sustainable, Smart, Safe and Secure Society", SemiconNano2019, Kobe, Japan, SemiconNano2019, 2019/9/24

[12]Maki Kushimoto, Tadayoshi Sakai, Manato Deki, Yoshio Honda, and Hiroshi Amano, "Effects of annealing process on electrical conductivity of MgZnO", IWUMD We-14o, St.Petersburg, Leningrad, Russia, Ioffe Insitute, 2019/9/11

[13]Seiya Kawasaki, Hayata Fukushima, Shigeyosihi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz–Keldysh Effect and Avalanche Multiplication", SSDM2019, K-7-02, Nagoya, Aichi, Japan SSDM2019 Committee, 2019/9/5

[14]"Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano", "Effect of Post-metallization Annealing on Interface Properties of Al2O3/GaN Fabricated on c- and m-plane Free-standing GaN Substrates", SSDM2019, PS-4-23, Nagoya, Aichi, Japan, SSDM2019 Committee, 2019/9/4

[15]Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "Effect of Post-metallization Annealing on Interface Properties of Al2O4/GaN Fabricated on c- and m-plane Free-standing GaN Substrates", SSDM2019, SO-PS-4-23, Nagoya, Aichi, Japan, SSDM2019 Committee, 2019/9/4

[16]Takeru Kumabe, Masaya Ogura, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Shigeyoshi Usami, Manato Deki, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "Gallium-nitride-based Heterojunction Bipolar Transistors with Two-dimensional Hole Gas Fabricated by Epitaxial Lift-off Process", SSDM2019, K-4-03, Nagoya, Aichi, Japan, SSDM2019 Committee, 2019/9/4

[17]"Jia Wang, Shengxiang Jiang, Hua Zong, Yaqiang Liao, Ting Liu, Jian Shen, Yuto Ando,Yoshio Honda, Xiaodong Hu, Hiroshi Amano, Ya-Hong Xie", "Vertical PN Junction-based GaN Power Diode", SSDM2019, K-1-04, Nagoya, Aichi, Japan, SSDM2019 Committee, 2019/9/3

[18]Jian Shen, Yuefeng Yu, Yang Gan, Guoqiang Li, Hiroshi Amano, "MBE Self-Assembled Growth of InGaN Nanorods on Patterned Sapphire Substrate with Enhanced Photoluminescence Performance", SSDM2019, F-2-04, Nagoya, Aichi, Japan, SSDM2019 Committee, 2019/9/3

[19]Geoffrey Avit, Yoann Robin, Yaqiang Liao, Shuggo Nitta and Hiroshi Amano, "Growth and properties of InGaN based nanorods for LEDs : comparison between core/shell and axial MQWs structures", SSDM2019, D-2-03, Nagoya, Aichi, Japan, SSDM2019 Committee, 2019/9/3

[20]X. Yang, S. Nitta, M. Pristovsek, M. Kushimoto, Y. H. Liu, Y. Honda, and H. Amano, "Metalorganic vapor phase epitaxy and characterization of two-dimensional hexagonal boron nitride layers", 2nd ACALED Symposium, Gwangju, South Korea, Gwangju Institute of Science and Technology, 2019/8/8

[21]"Yuto Ando, Tohru Nakamura, Manato Deki, Shigeyoshi Usami, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano", "Interface properties of lateral MISFETs fabricated on m- and c-plane", ICNS-13 B10.04, Bellevue, Washington, USA, ICNS-13 Committee, 2019/7/11

[22]Nan HU, Duc V. DINH, Markus PRISTOVSEK, Yoshio HONDA, Hiroshi AMANO, "Growth and characterization of untwinned (10-13) GaN templates and InGaN/GaN quantum wells" ICNS-13 G10.03, Bellevue, Washington, USA, ICNS-13 Committee,2019/7/11

[23]Atsushi Tanaka, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, Hiroshi Amano "A novel birefringent observation for analyzing dislocations in GaN", ICNS-13 J02.06, Bellevue, Washington, USA, ICNS-13 Committee, 2019/7/10

[24]Yaqiang Liao, Jia Wang, Yuto Ando, Xu Yang, Jun Hirotani, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen and Hiroshi Amano "Fabrication of GaN-on-GaN Vertical Nanowire Schottky Barrier Diode by Top-down Approach", ICNS-13 H02.05, Bellevue, Washington, USA, ICNS-13 Committee, 2019/7/9

[25]"M. Takahashi, A. Tanaka, S. Usami, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano", "Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature", ICNS-13 B05.02Bellevue, Washington, USA, ICNS-13 Committee, 2019/7/9

[26]Hiroshi Amano, "Development of Sustainable, Smart, Secure and Safe Society by Transformative Electronics", 21st IVC Conference, Malmo, Sweden Conference IVC21, 2019/7/4

[27]Hiroshi Amano, "How to realize 80% reduction in greenhouse gas emission by 2050", 10th International Conference on Materials for Advanced Technologies (ICMAT2019), Singapore, Materials Research Society Singapore, 2019/6/24

[28]Xu Yang, Shugo Nitta, Pristovsek, Markus Pristovsek , Yuhuai Liu, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano, "Two-dimensional h-BN multilayer grown on AlN by metalorganic vapor phase epitaxy",ICP2DC4, Hangzhou, Zhejiang, China ICP2DC4 Committee, 2019/6/11

[29]Hiroshi Amano, "How to realize 80% reduction in greenhouse gas emission by 2050 2019 E-MRS-IUMRS-ICAM", Nice, France, Eupopean Materials Research Society, 2019/5/28

[30]Hiroshi Amano, "GaN as a key material for realizing Internet of Energy", Compound Semiconductor Week 2019 （CSW2019), Nara, Japan, CSW2019 Committee, 2019/5/20

[31]Daiki Sato, T. Nishitani, Y. Honda, H. Amano "The annealing effect for the air-exposed surface on the GaN photocathode", EIPBN2019, EIPBN2019, Minneapolis, Minnesota, USA, EIPBN 2019 Committee, 2019/5/1

[32]Tadayoshi Sakai, Maki Kushimoto, Manato Deki, Yoshio Honda, Hiroshi Amano, "Mg composition control of co-sputtered MgZnO thin films toward the application of deep-UV transparent electrode", LEDIA'19, LEDIA-P-08, Yokohama, Kanagawa, Japan OPI Committee, Akasaki Research Center, 2019/4/24

[33]H. S. Wang, T. Sakai, X. Yang, M. Deki, M. Kushimoto, A. Tanaka, S. Nitta, Y. Honda, and H. Amano. "Influence of Annealing on Sputtered Boron Nitride Film," ISPlasma2019, Nagoya, Japan, 18P1-43, 2019/3/18

[34]S. Abhinay, S. Arulkumaran, G.I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda and H. Amano, "Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD," EDTM 2019, Bayfront Ave, Singapore, 2019/3/14

[35]Hiroshi Amano, "How to lead fundamental research to innovation", 11th HOPE Meeting with Nobel Laureates, Okinawa, Japan, 2019/3/5

[36]Y. Robin, Q. Bournet, M. Pristovsek, Y. Andre and H. Amano. "Limitation of simple NPN tunnel junction based LEDs grown by MOCVD for micro-display application". SPIE Photonics West, San Francisco, California, USA, 10918-65, 2019/2/7

2018年

[1]Maki Kushimoto, Yang Xu, Yuhuai Liu, Yoshio Honda, and Hiroshi Amano, "Optical properties of AlGaN based UVC laser structures on annealed AlN template", The international workshop on UV materials and devices (IWUMD-2018), Kunming City, Yunnan, China, 2018/12/11

[2]Mel Hainey, Jr., Yoann Robin, Hiroshi Amano, Dr. Noritaka Usami, "Coalesced, Centimeter-scale GaN Films on Amorphous Substrates via MOCVD Growth on a Silicon Seed Layer Fabricated by Aluminum-induced Crystallization," EMRS, Boston, Massachusetts, USA 2018/11/25

[3]Michal Stanislaw Bockowski., "Bulk GaN - prospects for J-P cooperation", Japan-Poland workshop, Ishikawa, Japan, 2018/11/17

[4]Zhibin Liu, Shugo Nitta, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano, "Effect of the misorientation angle of GaN substrate on high-indium-content InGaN grown by metalorganic vapor phase epitaxy", International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan, GR16-5, 2018/11/16

[5]Nan Hu, Duc V. Dinh, Markus Pristovsek, Yoshio Honda, Hiroshi Amano, "Growth and characterization of templates and InGaN/GaN quantum wells on (0001), (10-13), (11-22) and (10-10) oreintation", International Workshop on Nitride Semiconductors 2018, IShikawa, Japan, GR13-4, 2018/11/15

[6]Xu Yang, Shugo Nitta, Markus Pristovsek, Yaquiang Liao, Yuhuai Liu, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano, "Growth of hexagonal boron nitride on AIN/sapphire template by MOVE", International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan, J6-6, 2018/11/15

[7]Yaqiang Liao,Yuto Ando, Kevin J. Chen, Jun Hirotani, Qiang Liu, Xu Yang, Yoann Robin, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "GaN-on-GaN Vertical Nanowire Schottky Barrier Diode Fabricated by Top-down Approach", International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan, ED10-4, 2018/11/15

[8]Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "Screw dislocations and nanopipe generation in a MOVPE-grown homoepitaxial layer on freestanding GaN substrates and the electrical influence on vertical p−n diodes", International Workshop on Nitride Semiconductors 2018, IShikawa, Japan, LN1-6, 2018/11/15

[9]Mel F. Hainey, Jr., Yoann Robin, Hiroshi Amano and Noritaka Usami, "Coalesced, Centimeter-scale GaN Films on Amorphous Substrates via MOCVD Growth on a Silicon Seed Layer Fabricated by Aluminum-induced Crystallization", International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan, GR10-8, 2018/11/15

[10]Michal Stanislaw Bockowski, "Combination of advantages of HVPE and ammonothermal methods as a solution for crystallization of GaN", International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan, GR9-1, 2018/11/15

[11]Y. Robin, F. Hemeret, G. D’Inca, M. Pristovsek, A. Trassoudaine, and H. Amano, "Optical characterization of nitride-based multi-color micro-LEDs", International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan, OD2-5, 2018/11/13

[12]Qiang Liu, Naoki Fujimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with showerhead for low cost bulk GaN crystal growth", International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan, TuP-GR-2, 2018/11/13

[13]Hiroshi Amano, "Transformative Electronics for Realizing Sustainable, Smart, Secure and Safe Society", International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan, Plenary, 2018/11/12

[14]Hayata Fukushima, Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "Vertical GaN pn diode with Avalanche capability structure," International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan, ED1-4, 2018/11/12

[15]Hiroshi Amano, "Transformative Electronics for Realizing Sustainable and Smart Society", 2018 KPS Fall Meeting, Changwon, Korea, Plenary, 2018/10/25

[16]Hiroshi Amano, "GaN-based devices and systems for establishing sustainable, smart, secure and safe society", MIRAI Seminar 2018, Tokyo, Japan, Plenary, 2018/10/10

[17]H. Amano, Y. Robin, C. Heajeong, M. Kushimoto, S. Nitta, Y. Honda, M. Pristovsek, "Nanorod Display as a Tool for Realizing Sustainable Smart Society",19th International Workshop on Inorganic and Organic Electroluminescence & 2018 International Conference on the Science and Technology of Emissive Displays and Lighting, Tokyo, Japan, Plenary, 2018/9/11

[18]Yoko Sato, Daisuke Hayashi, Masakazu Minami, Shugo Nitta, "Real-time measurement of Cp2Mg vapor concentration using the non-dispersive infrared spectroscopy for MOCVD process", RSC Tokyo International Conference 2018, Chiba, Japan, 2018/9/6

[19]Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "Dependency of the reverse leakage current on the MOVPE growth pressure of vertical p-n diodes on a GaN free-standing substrate", International Symposium on Growth of III-Nitrides, Warsaw, Poland,　ElectroV , 2018/8/10

[20]Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Kazuhisa Torigoe, Maki Kushimoto, and Hiroshi Amano, "Reduction of Carrier Concentration Increase near the Surface of Silicon Substrate after GaN Growth", International Symposium on Growth of III-Nitrides, Warsaw, Poland, 　ElectroV , 2018/8/10

[21]Atsushi Tanaka, Kentaro Nagamatsu, Shigeyoshi Usami, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "Observation of Dislocation Propagation in GaN on GaN Structure with a Multiphoton Excitation Photoluminescence Microscope", International Symposium on Growth of Ⅲ-Nitrides ISGN-7, Warsaw, Poland, 2018/8/9

[22]Yuto Ando, Kentaro Nagamatsu, Atsushi Tanaka, Manato Deki,　Ousmane 1 Barry, Shigeyoshi Usami, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "Schottky Barrier Diodes Fabricated on Miscut m-plane Substrates", International Symposium on Growth of III-Nitrides, Warsaw, Poland, Electro Ⅳ, 2018/8/9

[23]M. Takahashi, K. Sone, A. Tanaka, S. Usami, M. Deki, M. Kushimoto, K. Nagamatsu, S. Nitta, Y. Honda, and H. Amano, "Characterizations of high-temperature Mg ion implantation in GaN", International Symposium on Growth of III-Nitrides, Warsaw, Poland, Electro Ⅲ, 2018/8/9

[24]Manato Deki、Kazushi Sone、Kenta Watanabe, Fumiya Watanabe, Kentaro Nagamatsu, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "Improvement of Electrical Stability of ALD-Al203/GaN Interface by UV/03 Oxidation and Postdeposition Annealing", International Symposium on Growth of III-Nitrides, Warsaw, Poland, Electro Ⅲ, 2018/8/9

[25]Hiroshi Amano, "Transformative Electronics Based on GaN and Related Materials for Realizing Sustainable Smart Society", International Symposium on Growth of III-Nitrides, Warsaw, Poland, Plenary, 2018/8/6

[26]Qiang Liu, Naoki Fujimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "Study of Low Cost Large Size Bulk GaN Crystal Growth by a New Vertical HVPE Reactor with Showerhead Nozzles", International Symposium on Growth of III-Nitrides, Warsaw, Poland, 　G&ChI , 2018/8/6

[27]Yoann Robin, Markus Pristovsek, Hiroshi. Amano," What is red? On the chromaticity of orange-red InGaN/GaN based LEDs", International Conference on the Phisyics of Semiconductors2018, Montpellier, France, 2018/7/31

[28]Yoann. Robin, E. Evropeitsev, T. Shubina, S.Y. Bae, S. Nitta, M. Kushimoto, D. Kirilenko, V. Davydov, A. Smirnov, A. Toropov, S. Ivanov, H. Amano, " Localization and transient emission properties in InGaN/GaN QWs of different polarity within core-shell nanorods",International Conference on the Phisyics of Semiconductors2018, Montpellier, France, Growth and characterization - 3, 2018/7/31

[29]Yoann Robin, E. Evropeitsev, T. Shubina, S.Y. Bae, S. Nitta, M. Kushimoto, D. Kirilenko, V. Davydov, A. Smirnov, A. Toropov, S. Ivanov, H. Amano, "Narrow excitonic lines in core-shell nanorods with InGaN/GaN QWs crossed by basal stacking faults", International Conference on the Phisyics of Semiconductors2018, Montpellier, France, Devices and applications - 1, 2018/7/31

[30]Hiroshi Amano, "Group III nitrides as a tool for establishing sustainable smart society", 34th International Conference on the Physics of Semiconductors, Montpellier, France, Nobel Symposium, 2018/7/29

[31]Shugo Nitta, Kentaro Nagamatsu, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano, "Direct observation of ammonia decomposition and interaction with trimethylgallium in a metalorganic vapor phase epitaxy reactor," 19th International Conference on Metalorganic Vapor Phase Epitaxy, Nara, Japan, 7B-2.3, 2018/6/7

[32]Zheng Ye, Shugo Nitta, Kentaro Nagamatsu, Naoki Fujimoto, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano, "Ammonia Decomposition and Reaction by High-Resolution Mass Spectrometry for Group III-Nitrides Epitaxial Growth," 19th International Conference on Metalorganic Vapor Phase Epitaxy, Nara, Japan, P2-59, 2018/6/7

[33]Nan Hu, Duc Van. Dinh, Markus Pristovsek, Yoshio Honda, Hiroshi Amano, "Obtaining metal-polar (10-13) GaN on directionally AlN sputtered m-plane sapphire substrate," 19th International Conference on Metalorganic Vapor Phase Epitaxy, Nara, Japan, 7C-1.4, 2018/6/7

[34]Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Kentaro Nagamatsu, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, and Hiroshi Amano, "Effect of the environment temperature around the wafer on InGaN grown by metalorganic vapor phase epitaxy," 19th International Conference on Metalorganic Vapor Phase Epitaxy, Nara, Japan, 5C-1.5, 2018/6/5

[35]Hiroshi Amano, "MOVPE as a tool for realizing sustainable smart society", 19th International Conference on Metalorganic Vapor Phase Epitaxy, Nara, Japan, Plenary, 2018/6/4

[36]Yoann Robin, Yaqiang Liao, Markus Pristovsek, and Hiroshi Amano, "Dependence of micro-rod facets on diameter and impact on InGaN quantum wells," 19th International Conference on Metalorganic Vapor Phase Epitaxy, Nara, Japan ,4C-1.2, 2018/6/4

[37]Shigeyoshi Usami, Yoshihiro Sugawara, Yong-Zhao Yao, and Yukari Ishikawa, Norihito Mayama, Kazuya Toda, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods," The Compound Semiconductor Week 2018, Massachusetts, USA, D1.3 S.-44, 2018/5/30

[38]Hiroshi Amano, "Blue LEDs and Transformative Electronics for Developing Sustainable Smart Society", 2018 Display Week International Symposium, Los Angeles, USA, Keynote, 2018/05/22

[39] Hayata Fukushima, Yuto Ando, Shigeyoshi Usami, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "Mesa depth dependence of breakdown voltage of GaN pn diode", ISPlasma2018, 名城大学, Oral (2018/3/7)

[40]Yoann Robin and Hiroshi Amano, "Micro-LEDs for full-color display: critical review and recent progresses," Seminaire du CRHEA, Valbonne, France, 2019/3/7

[41] Tatsuya Hattori, Maki Kushimoto,Shugo Nitta,Yoshio Honda,Hiroshi Amano, "Comparison of In incorporation in axial InGaN quantum wells on GaN and InGaN nanorods grown by plasma assisted molecular beam epitaxy", ISPlasma2018, 名城大学, Oral (2018/3/5)

[42] Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Markus Pristovsek, Yuhuai Liu, Yoshio Honda, Hiroshi Amano, "Impact of temperature on pulsed-mode MOCVD hexagonal boron nitride on sapphire", SPIE Photonics West 2018, San Francisco, U.S.A., Oral (2018/1/29)

2017年

[1] M.Ogura, Y.Ando, S.Usami, K.Nagamatsu, M.Kushimoto, M.Deki,　A.Tanaka, S.Nitta, Y.Honda, M.Pristovsek, H.Kawai, S.Yagi, H.Amano", Development of Sustainable Smart Society by Transformative Electronics", 2017 IEEE International Electron Devices Meeting (IEDM 2017, San Francisco, U.S.A., Plenary Lecture, (2017/12/6)

[2] Ousmane I Barry, Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Markus Pristovsek, Yoshio Honda, and Hiroshi Amano, "Growthand characterization of homoepitaxial m-plane GaNon native bulk GaNsubstrates: prospects of next-generation electronic devices", 8th International Conference and Exhibition on Lasers, Optics & Photonics (Optics2017), Las Vegas, U.S.A., Oral (2017/11/14-17)

[3] Si-Young Bae, Kaddour Lekhal, Yoann Robin, Ho-Jun Lee, Ousmane 1 Barry, Xu Yang, Yaqiang Liao, Yoshio Honda, Hiroshi Amano, Jung-Wook Min, Dong-Seon Lee, "Defect reduction of GaN nano rods on hetero-substrates: Behaviors of basal stracking faults", 8th International Conference and Exhibition on Lasers, Optics & Photonics (Optics2017), Las Vegas, U.S.A., Oral (2017/11/14-17)

[4] Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Ousmane 1 Barry, Yagiang Liao, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano, "Fabrication of nanowires-based devices grown with controlled orientation", 8th International Conference and Exhibition on Lasers, Optics & Photonics (Optics2017), Las Vegas, U.S.A., Oral (2017/11/14-17)

[5] S.Nitta, Z.Liu, S.Usami, Z.Ye, K.Nagamatsu, M.Kushimoto, M.Deki, A.Tanaka, Y.Honda, M.Pristovsek, and H.Amano, "In situ and ex situ optical characterization of nitride semiconductor crystal for advanced optical and power electronic devices", Optics 2017 / 8th International Conference and Exhibition on Lasers, Optics & Photonics, Las Vegas, Nevada, USA, Invited (2017/11/16)

[6] X.Yang, S.Nitta, K.Nagamatsu, M.Pristovsek, Y.Liu, Y.Honda, and H.Amano, "Growth and Structural Characterization of Hexagonal BoronNitr ide on Sapphire", International Workshop on UV Materials and Devices 2017（IWUMD2017), 九州大学医学部百年講堂, Oral (2017/11/16)

[7] Shigeyoshi Usami, Kazunobu Kojima, Maki Kushimoto, Manato Deki, Shugo Nitta, Shigefusa Chichibu, Hiroshi Amano, "Evaluation of internal quantum efficiency of LED by photocurrent measurement", The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017), Banff, Canada, Oral (2017/10/11)

[8] Maki Kushimoto, Takafumi Suzuki, Daiki Ito, Yoshio Honda, and Hiroshi Amano, "Semipolar InGaN Optical Devices on Patterned Si Substrates", The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017), Banff, Canada, Oral (2017/10/10)

[9] M.Deki, K.Nagamatsu, A.Tanaka, M.Kushimoto, S.Nitta, Y.Honda, and H.Amano, "Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors", International Conference on Materials and Systems for Sustainability 2017, Nagoya, Japan, Oral (2017/09/30)

[10] S.Usami, Z.Ye, X.Yang, K.Nagamatsu, M.Kushimoto, M.Deki, A.Tanaka, S.Nitta, Y.Honda, M.Pristovsek, H.Amano", Blue LEDs and Transformative Electronics for Establishing Sustainable Smart Society", International Conference on Materials and Systems for Sustainability (ICMaSS2017), Nagoya, Japan, Plenary Lecture, (2017/9/29)

[11] Yoshio Honda, Atsushi Tanaka, Shigeyoshi Usami, Kentaro Nagamatsu, Shugo Nitta, and Hiroshi Amano, "Dislocation observation of GaN/GaN homo epitaxial growth film by Multi-photon absorption photoluminescence", Semiconnano 2017, Como, Italy, Invited (2017/9/26)

[12] M.Deki, Y.Ando, K.Nagamatsu, A.Tanaka, M.Kushimoto, S.Nitta, Y.Honda, and H.Amano, "Deep Levels in Homoepitaxial m-plane GaN Schottky Barrier Diodes", 10th International Workshop on Bulk Nitride Semiconductors, Espoo, Finland, Oral (2017/09/18)

[13] H.Amano, Y.Robin, S.Y.Bae, K.Nagamatsu, M.Kushimoto, M.Deki, T.Nishitani, D.Sato, A.Tanaka, S.Nitta, Y.Honda, M.Pristovsek", Development of Sustainable Smart Society via Transformative Electronics", The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), Kyoto, Japan, Nobel Laureate Lecture, (2017/8/28)

[14] H.Amano, "New era of LEDs", The 24th Congress of the International Comission for Optics (ICO-24), Tokyo, Japan, Plenary Lecture, (2017/8/21)

[15] K.Nagamatsu, Y.Ando, Z.Ye, O.I Barry, A.Tanaka, M.Deki, S.Nitta, Y.Honda, and H.Amano, "Reduction of impurities and realization of high breakdown voltage Schottky barrier diodes using homoepitaxial m-plane GaN grown by metalorganic vapor phase epitaxy in a quartz-free reactor", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Poster C 02.17 (2017/7/26)

[16] Ousmane I Barry, Si-Young Bae, Kaddour Lekhal, Yoshio Honda, and Hiroshi Amano, "N2 carrier gas as an alternative to H2 for improved surface morphology and structural quality of MOVPE-grown m–plane (10-10) GaN", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/26)

[17] Atsushi Tanaka, Ousmane 1 Barry, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off-angled GaN substrate", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Poster C.01.54 (2017/7/25)

[18] M.Deki, K.Sone, J.Matsushita, K.Nagamatsu, A.Tanaka, M.Kushimoto, S.Nitta, Y.Honda, and H.Amano, "Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral C.4.6 (2017/07/25)

[19] Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "Correlation between dislocations and leakage current of p-n diodes on free-standing GaN substrate", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/25)

[20] Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano, "Reduction of Dislocation in GaN on Silicon Substrate Using In-situ Etching", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/25)

[21] X.Yang, S.Nitta, K.Nagamatsu, M.Pristovsek, Y.H.Liu, Y.Honda, and H.Amano, "The surface evolution of hexagonal boron nitride on sapphire by pulsed-mode MOVPE", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/25)

[22] Zhibin Liu, Ryosuke Miyagoshi, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "Morphological study of InGaN layer growth on GaN substrate by metalorganic vapor phase epitaxy", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/25)

[23] Hiroshi Amano, Tatsuya Hattori, Yoann Robin, Kaddour Lekhal, Si-Young Bae, Maki Kushimoto, Yoshio Honda, Yasuhisa Ushida, Geoffrey Avit, Agnès Trassoudaine", Growth of III-Nitride Nanorods for Future Optoelectronics Applications", 18th International Conference on Light-Matter Coupling in Nanostructures (PLMCN18), Wurzburg, Germany, Plenary Lecture, (2017/7/11)

[24] H.Amano, "Nitride-Based Future Electronics for Establishing a Sustainable Society", 9th International Conference on Materials for Advanced Technologies (ICMAT2017), Singapore, Plenary Lecture, (2017/6/20)

[25] H.Amano, "Lighting the Earth with LEDs", 9th International Conference on Materials for Advanced Technologies (ICMAT2017), Singapore, Nobel Laureate Public Lecture, (2017/6/19)

[26] Hojun Lee, Siyoung Bae, Kaddour Lekhal, Yoshio Honda, Hiroshi Amano, "Optical characterization of semipolar InGaN/GaN MQWs grown on Si(001) substrate", 2017 MRS Spring Meeting & Exhibit (MRS2017), Phoenix, U.S.A., Oral (2017/4/17-21)

[27] Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano, "Photocurrent and Photoluminescence measurements for InGaN Based LED", LEDIA’17 LDC'17 joint session., Yokohama, Japan, LED-LDC1-2, (2017/4/19)

名古屋大学工学研究科電子工学専攻 天野・本田研究室

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名古屋大学工学研究科電子工学専攻天野・本田研究室